TVS Diode Arrays (SPA
®
Diodes)
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/13
6
General Purpose ESD Protection - SM05 through SM36
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
P
Pk
Peak Pulse Power (t
p
=8/20μs)
400
W
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
SM05 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 5.0 V
Reverse Voltage Drop V
R
I
R
=1mA 6.0 V
Leakage Current I
LEAK
V
R
=5V 1. 0 μA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 9.8 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 13.0 V
Dynamic Resistance
2
R
DYN
TLP, t
p
=100ns, I/O to GND 0.19 Ω
Peak Pulse Current
(8/20µs)
1
Ipp t
p
=8/20µs 24.0 A
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
I/O-GND
Reverse Bias=0V, f=1MHz 400 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 350 pF
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
SM12 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 12.0 V
Reverse Voltage Drop V
R
I
R
=1mA 13.3 V
Leakage Current I
LEAK
V
R
=12V 1. 0 μA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 18.5 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 22.5 V
Dynamic Resistance
2
R
DYN
TLP, t
p
=100ns, I/O to GND 0.25 Ω
Peak Pulse Current
(8/20µs)
1
Ipp t
p
=8/20µs 1 7. 0 A
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
I/O-GND
Reverse Bias=0V, f=1MHz 150 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 120 pF
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