
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:08/06/13
Power Module
4
MG06400D-BN1MM
600V IGBT Family
Figure 7: Diode Forward Characteristics
V
GE
(V)
Q
g
˄nC˅
0
0
20
25
10
15
5
400
800
1200
1600
2000
V
CC
=300V
I
C
=400A
T
Vj
=25°C
C (nF)
V
CE
˄V˅
30 25 20 15
V
GE
=0V
f=1MHz
C
ies
C
res
0.1
1
0
510
C
oes
100
10
35
Figure 8: Typical Capacitances vs. V
CE
0
0
100 300
V
CE
˄V˅
700
200 400
500 600
I
C
T
Vj
=150°C
T
C
=25°C
V
GE
=15V
1000
800
600
400
200
1200
Figure 9: Reverse Biased Safe Operating Area
0
0100
200
300 400 500
600
V
CE
˄V˅
700
2000
2400
1600
120
I
0
800
400
Csc
(A)
T
Vj
=150°C
T
C
=25°C
V
GE
=15V
t
sc
İ10µs
Figure 10: Short Circuit Safe Operating Area
T
C
Case Temperature(°C)
I
C
T
Vj
=150°C
V
GE
ı15V
0
25
0
300
200
100
500
400
50 75
125
100
150
600
175
Figure 11: Rated Current vs. T
C
T
Vj
=125°C
T
Vj
=25°C
820
700
560
420
I
F
(A)
280
140
0
V
˄V˅
03 3.5
2.5
2.0
1.51.0
0.5
Figure12: Diode Forward Characteristics
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